Wafer Thickness Measurement Solutions

Application Background

Wafer thickness is a key parameter in semiconductor manufacturing, directly affecting device performance, yield, and manufacturing costs

Importance of Wafer Thickness Measurement

Device Performance

Wafer thickness directly affects electrical, thermal, and mechanical stability of devices
Process Yield

Precise thickness control improves yield in subsequent processes such as lithography and etching
Cost Control

Thinning processes reduce silicon material consumption and lower production costs
Advanced Packaging

Thin wafers are the foundation for 3D stacking, TSV and other advanced packaging technologies

Wafer Thickness Evolution Trends

1

Traditional Wafers

Thickness: 600-775μm (150mm/200mm)

2

Thin Wafers

Thickness: 200-400μm (300mm)

3

Ultra-thin Wafers

Thickness: 50-200μm (advanced packaging)

4

Extremely Thin Wafers

Thickness: <50μm (advanced packaging)

Wafer Thickness Measurement Modules

Professional measurement solutions for wafer thickness measurement needs at different manufacturing stages

Substrate Wafer Thickness Measurement

Supports thickness measurement for silicon, silicon carbide (SiC), gallium nitride (GaN) and other substrate materials, applicable to thickness monitoring during wafer preparation and before epitaxial growth.

Silicon wafers: <1μm - 800μm
SiC/GaN: <1μm - 500μm
Measurement repeatability: 1nm
Supports various wafer sizes
Non-contact measurement, no damage

Thinning Process Thickness Measurement

Supports thickness monitoring for grinding, etching, polishing and other thinning processes, applicable to wafer thinning processes before advanced packaging.

Measurement range: <1μm - 1000μm
Measurement repeatability: 1nm
Supports TTV measurement (Total Thickness Variation)
Applicable to grinding process monitoring
Real-time thickness feedback, closed-loop control

Ultra-thin Wafer Thickness Measurement

Supports thickness measurement for wafers below 50μm, applicable to wafer thickness monitoring for 3D stacking, TSV and other advanced packaging processes.

Measurement range: <1μm - 200μm
Measurement repeatability: 1nm
Supports warped wafer measurement
Applicable to 3D stacking processes
Supports temporary bonding wafer measurement

Compound Semiconductor Wafer Measurement

Supports thickness measurement for SiC, GaN, GaAs and other compound semiconductor wafers, applicable to power device and optoelectronic device manufacturing.