Advanced Spectroscopic Ellipsometer with Mueller Matrix

ES-Tenso
Ellipsometer

Broadband light source with polarization modulation, acquiring Psi/Delta parameters and full 4×4 Mueller matrix. Combines high-precision spectral data with built-in optical models and material library to output film thickness, refractive index n, extinction coefficient k, and dielectric constant ε — fully automated.

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Core Features

ES-Tenso integrates advanced polarization modulation and Mueller matrix measurement, providing comprehensive thin film characterization for research and industrial applications

Full Mueller Matrix

4×4 full Mueller matrix measurement captures complete polarization information, enabling characterization of anisotropic and depolarizing samples

Multi-Parameter Output

Simultaneously outputs film thickness, refractive index n, extinction coefficient k, and dielectric constant ε for comprehensive material characterization

Fully Automated

Built-in optical models and material library enable fully automated measurement and analysis, from spectral acquisition to parameter extraction

Iterative Algorithm

Advanced iterative fitting algorithms combined with spectral data ensure high-precision parameter extraction with sub-nanometer accuracy

Working Principle

The complete measurement process from light source to parameter output

Light Source & Modulation

Broadband light source emits wide-spectrum beam, which is polarization-modulated before incidence on the sample surface

Signal Acquisition

Detection system collects reflected/transmitted polarized light signals (Psi/Delta parameters, 4×4 full Mueller matrix)

Algorithm Output

Combines spectral data with built-in optical models and material library, outputs thickness, n, k, ε through iterative fitting

Technical Specifications

Detailed technical specifications of ES-Tenso ellipsometer

Parameter	Specification
Measurement Principle	Polarization Modulation Spectroscopic Ellipsometry
Light Source	Broadband light source with polarization modulation
Output Parameters	Film thickness, Refractive index (n), Extinction coefficient (k), Dielectric constant (ε)
Mueller Matrix	4×4 Full Mueller Matrix measurement
Polarization Parameters	Psi (Ψ) / Delta (Δ) parameters
Detection Mode	Reflection / Transmission
Analysis Method	Iterative algorithm fitting with built-in optical models and material library
Automation	Fully automated from spectral acquisition to parameter extraction

Application Scenarios

ES-Tenso Ellipsometer is widely used in various fields requiring comprehensive thin film characterization

Semiconductor Research

Characterizing ultra-thin gate dielectrics, FinFET structures, and 3D NAND with simultaneous thickness and optical constant measurement.

Advanced Optical Coatings

Full characterization of AR/HR coatings, filters, and beam splitters including anisotropic and multi-layer structures.

Dielectric Constant Studies

Measuring dielectric constant ε of thin film materials for electronics, capacitors, and energy storage applications.

Biomaterials

Non-destructive characterization of biomembranes, protein layers, and cell culture substrates with full optical parameter extraction.

New Energy Materials

Characterizing functional layers in solar cells, lithium batteries, and fuel cells with comprehensive optical and thickness data.

Fundamental Physics Research

Investigating dielectric functions, band structures, and plasmon resonances with full Mueller matrix analysis.

ES-TensoEllipsometer