Photovoltaic Film Thickness Solutions

Application Background

Photovoltaic cell efficiency and stability are closely related to thin film thickness; precise film thickness control is key to improving cell performance

Importance of Thin Film Measurement

Conversion Efficiency

Thin film thickness directly affects light absorption, carrier transport and cell conversion efficiency
Process Uniformity

Film thickness uniformity on cell surface is an important indicator of process quality
Long-term Stability

Appropriate film thickness improves cell anti-aging performance and long-term stability
Cost Control

Precise film thickness control reduces material waste and lowers production costs

Photovoltaic Cell Structure

1

Anti-Reflection Coating (ARC)

Reduces light reflection, improves light absorption efficiency

2

Emitter Layer

n-type doping layer forming PN junction

3

Intrinsic Layer (i-layer)

Passivation layer reducing recombination

4

Back Surface Field (BSF)

Improves minority carrier collection efficiency

Photovoltaic Film Thickness Measurement Modules

Professional measurement solutions for thin film measurement needs of different photovoltaic technology routes

Crystalline Silicon Thickness Measurement

Supports thickness measurement for N-type and P-type monocrystalline silicon and polysilicon substrates, applicable to thickness monitoring during wafer manufacturing and cell production processes.

Measurement range: 100μm - 1000μm
Measurement accuracy: ±1μm
Supports N-type and P-type silicon wafer measurement
Applicable to thin-wafer process monitoring
Supports online and offline measurement modes

Poly-Silicon Thickness Measurement

Supports poly-silicon (Poly-Si) thin film thickness measurement, applicable to TOPCon, IBC and other high-efficiency cell technology poly layer thickness monitoring.

Measurement range: 50nm - 2000nm
Measurement accuracy: ±0.5nm
Supports doped and intrinsic poly-silicon measurement
Applicable to TOPCon cell poly layer monitoring
Supports multi-layer poly structure analysis

Perovskite Film Layer Measurement

Supports thickness measurement of perovskite active layer, electron transport layer (ETL), hole transport layer (HTL) and other multi-layer film systems, applicable to perovskite tandem cell R&D and production.

Perovskite layer: 100nm - 1000nm
ETL/HTL layer: 10nm - 200nm
Measurement accuracy: ±0.3nm
Supports simultaneous multi-layer film measurement
Applicable to tandem cell R&D

Anti-Reflection Film Measurement

Supports thickness measurement of SiNx, SiO2, Al2O3 and other anti-reflection and passivation films, applicable to cell surface treatment process monitoring.