SiO2 折射率

SiO2 的光学常数 (n, k) 数据，涵盖 0.03 – 2.20 μm 波长范围。

波长范围 0.028 – 2.200 μm
数据点 1904

关键波长处的光学常数

632.8 nm (He-Ne)
n = 1.4737
k = 0.0000
589.3 nm (Na-D)
n = 1.4751
k = 0.0000
532 nm
n = 1.4775
k = 0.0000
1550 nm (通讯)
n = 1.4596
k = 0.0000

n, k 色散曲线

数据表（采样）

波长 (μm) n k
0.02750.933040.09468
0.03060.925970.10742
0.03420.909870.12337
0.03810.886850.14895
0.04240.855170.18995
0.04720.818700.26470
0.05270.816030.38923
0.05870.884060.51036
0.06540.969920.60351
0.07281.139300.69401
0.08121.226150.64558
0.09041.378860.73119
0.10081.474910.72832
0.11231.750410.59342
0.12512.109770.44110
0.13941.860170.05737
0.15541.707390.00807
0.17311.628220.00220
0.19291.582050.00084
0.21501.552520.00082
0.23961.532190.00081
0.26691.517470.00064
0.29741.506410.00042
0.33141.497890.00024
0.36931.491260.00013
0.41151.486040.00006
0.45861.481890.00003
0.51101.478570.00001
0.56941.475860.00001
0.63451.473610.00000
0.70701.471690.00000
0.78781.470020.00000
0.87781.468490.00000
0.97811.467020.00000
1.08991.465550.00000
1.21451.463980.00000
1.35331.462240.00000
1.50801.460180.00001
1.68041.457660.00007
1.87241.454560.00031
2.08641.450780.00068
2.19991.448510.00080

上表为采样数据（共 1904 个数据点），点击"下载完整 CSV"获取全部数据。

数据说明

Film SiO2; Deposited by e-beam evaporation on c-Si at 25 °C; 878.4 nm thick film with a fine polycrystalline structure containing water and organic adsorbed contaminants in pores; Heterogenous data processing combining ellipsometric and spectrophotometric measurements; Room temperature.

参考文献

D. Franta, D. Nečas, I. Ohlídal. A. Giglia. Optical characterization of SiO2 thin films using universal dispersion model over wide spectral range. Proc. SPIE 9890, 989014 (2016) (Numerical data kindly provided by Daniel Franta)

相关材料（主要）

Ag Ag3AsS3 (e) Ag3AsS3 (o) AgBr AgCl AgGaS2 (e)

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