Si3N4 折射率

Si3N4 的光学常数 (n, k) 数据，涵盖 0.21 – 1.69 μm 波长范围。

波长范围 0.211 – 1.688 μm
数据点 697

关键波长处的光学常数

632.8 nm (He-Ne)
n = 2.0190
k = 0.0000
589.3 nm (Na-D)
n = 2.0244
k = 0.0000
532 nm
n = 2.0341
k = 0.0000
1550 nm (通讯)
n = 1.9904
k = 0.0000

n, k 色散曲线

数据表（采样）

波长 (μm) n k
0.21142.527820.15996
0.23832.377110.05329
0.26522.267180.00989
0.29222.191410.00001
0.31912.146390.00001
0.34612.116140.00001
0.37312.094220.00001
0.40012.077660.00001
0.42712.064760.00001
0.45412.054470.00001
0.48122.046110.00001
0.50822.039220.00001
0.53522.033460.00001
0.56232.028590.00001
0.58932.024430.00001
0.61632.020860.00001
0.64332.017750.00001
0.67032.015040.00001
0.69722.012660.00001
0.72412.010560.00001
0.75112.008690.00001
0.77802.007030.00001
0.80482.005530.00001
0.83162.004190.00001
0.85842.002980.00001
0.88522.001880.00001
0.91192.000880.00001
0.93861.999960.00001
0.96521.999130.00001
0.99181.998370.00001
1.04801.996940.00001
1.10581.995710.00001
1.16391.994650.00001
1.22201.993740.00001
1.28021.992950.00001
1.33861.992260.00001
1.39711.991660.00001
1.45581.991130.00001
1.51461.990660.00001
1.57351.990240.00001
1.63251.989860.00001
1.68821.989540.00001

上表为采样数据（共 697 个数据点），点击"下载完整 CSV"获取全部数据。

数据说明

100 nm thick film deposited by plasma-enchased CVD with certain recipe as an example. Optical properties of SiN films produced by different deposition methods and process parameters can be found in the reference.

参考文献

L. Yu. Beliaev, E. Shkondin, A. V. Lavrinenko, O. Takayama. Optical, structural and composition properties of silicon nitride films deposited by reactive radio-frequency sputtering, low pressure and plasma-enhanced chemical vapor deposition. Thin Solid Films 763, 139568 (2022) (Numerical data kindly provided by Osamu Takayama)

相关材料（主要）

Ag Ag3AsS3 (e) Ag3AsS3 (o) AgBr AgCl AgGaS2 (e)

需要测量 Si3N4 薄膜厚度？

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