EuS 折射率

EuS 的光学常数 (n, k) 数据，涵盖 0.19 – 1.70 μm 波长范围。

波长范围 0.190 – 1.700 μm
数据点 1091

关键波长处的光学常数

632.8 nm (He-Ne)
n = 2.1410
k = 0.0430
589.3 nm (Na-D)
n = 2.1560
k = 0.0700
532 nm
n = 2.1520
k = 0.1150
1550 nm (通讯)
n = 2.0470
k = 0.0040

n, k 色散曲线

数据表（采样）

波长 (μm) n k
0.19001.984001.06300
0.21702.294000.88200
0.24402.394000.66600
0.27102.608000.49800
0.29802.476000.22200
0.32502.346000.12900
0.35202.262000.09900
0.37902.204000.08500
0.40602.159000.08300
0.43302.126000.09500
0.46002.115000.11600
0.48702.125000.12900
0.51402.142000.12500
0.54102.155000.10900
0.56802.159000.08700
0.59502.155000.06600
0.62202.145000.04800
0.64902.134000.03600
0.67602.122000.02800
0.70302.111000.02300
0.73002.102000.02000
0.75702.095000.01900
0.78402.089000.01800
0.81102.084000.01800
0.83802.080000.01800
0.86502.077000.01800
0.89202.074000.01700
0.91902.072000.01700
0.94602.070000.01600
0.97302.068000.01600
1.00002.067000.01500
1.06752.063000.01300
1.13502.060000.01100
1.20252.058000.00900
1.27002.055000.00800
1.33752.053000.00700
1.40502.051000.00600
1.47252.049000.00500
1.54002.047000.00400
1.60752.046000.00300
1.67502.044000.00300
1.70002.044000.00300

上表为采样数据（共 1091 个数据点），点击"下载完整 CSV"获取全部数据。

数据说明

Ellipsometry sample: 100 nm thin film of electron beam evaporated EuS deposited on a 0.5 mm thick Si substrate held at room temperature. The base vacuum of the system was ~6×10-8 Torr whereas during electron-beam evaporation of EuS it was at ~2×10-6 Torr.

参考文献

M. L. Meretska, F. H. B. Somhorst, M. Ossiander, Y. Hou, J. Moodera, F. Capasso. Measurements of the magneto-optical properties of thin-film EuS at room temperature in the visible spectrum. Appl. Phys. Lett. 120, 251103 (2022) (Numerical data kindly provided by Frank Somhorst)

相关材料（主要）

Ag Ag3AsS3 (e) Ag3AsS3 (o) AgBr AgCl AgGaS2 (e)

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