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NS-30 series is a desktop automatic film thickness measurement and analysis system. Building on the foundation of film thickness measurement, it overlays an automatic sample stage that can perform automatic measurements on predefined points and further generate 2D and 3D data distribution diagrams. The NS-30 series is suitable for wafer film thickness measurement.
NS-30 Features
•Automatic sample measurement, platform size optional from 100mm to 450mm
•The software automatically generates measurement point distribution based on requirements
•2D and 3D mapping effects, including information such as thickness/refractive index/reflectanceFilm bow / stress measurement.
NS-30 Series Specifications
| Model Type | NS-30UV | NS-30 | NS-30NIR |
| Wavelength Range | 190 nm – 1100 nm | 380 nm – 1050 nm | 950 nm – 1700 nm |
| Thickness Measurement Range1 | 1 nm – 40 μm | 15 nm – 80 μm | 150 nm – 250 μm |
| Accuracy2 | 1 nm or 0.2% | 2 nm or 0.2% | 3 nm or 0.4% |
| Precision3 | 0.02 nm | 0.02 nm | 0.1 nm |
| Stability4 | 0.05 nm | 0.05 nm | 0.12 nm |
| Spot Size | 1.5 mm | 1.5 mm | 1.5 mm |
| Measurement Speed | < 1s（Single Measurement), 10ms for F1 algorithm | < 1s（Single Measurement), 10ms for F1 algorithm | < 1s（Single Measurement), 10ms for F1 algorithm |
| Light Source | Halogen + Deuterium Lamp | Halogen Lamp | Halogen Lamp |
| Sample Size | Diameter from 1mm to 300mm or larger | Diameter from 1mm to 300mm or larger | Diameter from 1mm to 300mm or larger |
1.Depends on the specific material
2.Si/SiO2 (500~1000nm) standard film sample
3.Calculate the 1x standard deviation of 100 measurements of a 500nm SiO2 standard wafer, and take the average of the 1x standard deviations over 20 valid measurement days
4.Calculate the average of 100 measurements of a 500nm SiO2 standard wafer, and calculate the 2x standard deviation of the average values over 20 valid measurement days
