Si3N4 Refractive Index

Optical constants (n, k) of Si3N4, covering 0.21 – 1.69 μm wavelength range.

Range 0.211 – 1.688 μm
Data Points 697

Optical Constants at Key Wavelengths

632.8 nm (He-Ne)
n = 2.0190
k = 0.0000
589.3 nm (Na-D)
n = 2.0244
k = 0.0000
532 nm
n = 2.0341
k = 0.0000
1550 nm (Telecom)
n = 1.9904
k = 0.0000

n, k Dispersion Curves

Data Table (Sampled)

Wavelength (μm)nk
0.21142.527820.15996
0.23832.377110.05329
0.26522.267180.00989
0.29222.191410.00001
0.31912.146390.00001
0.34612.116140.00001
0.37312.094220.00001
0.40012.077660.00001
0.42712.064760.00001
0.45412.054470.00001
0.48122.046110.00001
0.50822.039220.00001
0.53522.033460.00001
0.56232.028590.00001
0.58932.024430.00001
0.61632.020860.00001
0.64332.017750.00001
0.67032.015040.00001
0.69722.012660.00001
0.72412.010560.00001
0.75112.008690.00001
0.77802.007030.00001
0.80482.005530.00001
0.83162.004190.00001
0.85842.002980.00001
0.88522.001880.00001
0.91192.000880.00001
0.93861.999960.00001
0.96521.999130.00001
0.99181.998370.00001
1.04801.996940.00001
1.10581.995710.00001
1.16391.994650.00001
1.22201.993740.00001
1.28021.992950.00001
1.33861.992260.00001
1.39711.991660.00001
1.45581.991130.00001
1.51461.990660.00001
1.57351.990240.00001
1.63251.989860.00001
1.68821.989540.00001

Sampled data (697 points total). Click "Download Full CSV" for complete data.

Notes

100 nm thick film deposited by plasma-enchased CVD with certain recipe as an example. Optical properties of SiN films produced by different deposition methods and process parameters can be found in the reference.

References

L. Yu. Beliaev, E. Shkondin, A. V. Lavrinenko, O. Takayama. Optical, structural and composition properties of silicon nitride films deposited by reactive radio-frequency sputtering, low pressure and plasma-enhanced chemical vapor deposition. Thin Solid Films 763, 139568 (2022) (Numerical data kindly provided by Osamu Takayama)

Related Materials (Main)

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